Daniel Steckler
Research Scientist
IHP Microelectronics
Daniel Steckler received the B.Sc. and M.Sc. in electrical engineering at TU Berlin in 2018 and 2019, respectively. In 2019 he joined IHP - Leibniz Institut für Innovative Mikroelektronik and is currently pursuing a Ph.D. at IHP/TU Berlin. His research interests include high-speed germanium-silicon electro-absorption modulators and germanium photodiodes.
Presentations
Improving Performance of Germanium electro-absorption Modulators
In this talk, the issue of the emerging modulator bandwidth bottleneck in silicon photonics is outlined. Germanium electro-absorption modulators are presented as promising solutions to overcome this bottleneck. We explore recent advancements and demonstrate state-of-the-art Ge electro-absorption modulators with 3-dB bandwidths of ≥100 GHz, showcasing their potential to significantly enhance the performance of silicon photonic transmitters.