PRESENTATION

Improving Performance of Germanium electro-absorption Modulators

In this talk, the issue of the emerging modulator bandwidth bottleneck in silicon photonics is outlined. Germanium electro-absorption modulators are presented as promising solutions to overcome this bottleneck. We explore recent advancements and demonstrate state-of-the-art Ge electro-absorption modulators with 3-dB bandwidths of ≥100 GHz, showcasing their potential to significantly enhance the performance of silicon photonic transmitters.