Compound semiconductors, like SiC and GaN, are increasingly attractive for their ability to operate at higher voltages, currents, and frequencies, especially in power and RF devices. However, fabricating wafers using these compounds has proven to be challenging, which can adversely impact manufacturing yield and costs. In addition to conventional semiconductor defects, one of the challenges is the presence of crystalline dislocations that are often difficult to identify and characterize. This presentation will use real world use cases to discuss; defects including crystalline dislocations, cross-section and TEM lamella focused ion beam sample preparation, and the performance advantages provided by ion sources other than Ga+.
Antonio Mani is a key account technologist and Business Development Manager who drives strategic planning and execution of partnership programs with research institutes and industrial entities. With a background in Materials Science and Physics Engineering, Antonio has over 20 years of experience in roles such as application development engineering and R&D technical program management. Antonio's expertise includes Physical and Electrical Fault Analysis, and the industrial deployment of methods for defect detection and binning in GaN on Silicon and SiC based manufacturing processes.