PRESENTATION

Fully integrating lasers, modulators, and photodetectors with standard silicon photonic fabrication

We will present a photonic integration technology on silicon for producing Augmented Silicon Photonic Integrated Circuits with integrated lasers and/or SOAs. This is realized by bonding unprocessed III-V dices to the backside of Silicon photonic wafers, and post-processing the dices to form the lasers at wafer level. Unlike existing heterogeneous III-V/Si technologies, it relies on standard Silicon photonic processes available from commercial fabs. The latter now offer doped silicon, germanium and silicon nitride waveguides to accommodate best in class modulators, photodetectors and filters respectively. Combined with backside integrated lasers, the technology enables the fabrication of fully integrated photonic circuits at 1310nm or 1550nm, with unprecedented characteristics for optical communications and 3D sensing. A few examples of integrated circuits will be presented, highlighting the benefits of the integration of III-V/Si at the wafer level.

Sylvie Menezo

Scintil Photonics

Sylvie Menezo is CEO of SCINTIL Photonics, which she co-founded in November 2018 after being Laureate of the ILAB French contest from BPIfrance. SCINTIL exploits a disruptive photonic integrated circuit technology developed at CEA-Leti, in the domains of optical communications and sensing applications. Before founding SCINTIL, Menezo managed the Silicon Photonics Lab (2012-2014) and the Business Development activities in integrated photonics (2014-2017) at CEA-Leti (Grenoble). She previously worked at NZAT (Boston, USA), Alcatel (Marcoussis, France), and at Sercel-Compagnie Générale de Géophysique (Nantes France and Houston USA), managing product development teams or product lines. Since 2021, Menezo is at the board of ePIXfab, a European not-for-profit open alliance of academic and industrial organizations with a mission to promote silicon photonics science, technology and applications. Sylvie Menezo holds an Engineering degree from INSA Lyon (1997), a Ph.D from Centre National d’Etude des Télécommunications (1999, Bagneux) and a Part Time Executive MBA from Audencia Nantes (2007).