Heterogeneous integration of compound semiconductors devices on silicon provides a path to adding high-performance active components to silicon photonics platforms. Approaches to this integration include direct heteroepitaxy on silicon and micro transfer printing. Leveraging metalorganic chemical vapor deposition for direct heteroepitaxy enables process integration by selective area growth. Active components demonstrated include quantum dot lasers and semiconductor optical amplifiers, traveling wave modulators, and uni-traveling-carrier photodiodes.
Jonathan Klamkin received the B.S. degree from Cornell University, and the M.S. and Ph.D. degrees from the University of California Santa Barbara (UCSB). From 2008-2011 he was a member of the Technical Staff at MIT Lincoln Laboratory. From 2011-2013 he was an Assistant Professor at the Institute of Communication, Information and Perception Technologies (TeCIP), Scuola Superiore Sant’Anna, Pisa, Italy. From 2013-2015 he was an Assistant Professor of Electrical and Computer Engineering (ECE) and Materials at Boston University. In 2015 Prof. Klamkin joined the ECE Department at UCSB where he leads the Integrated Photonics Laboratory (iPL) and serves as Director of the UCSB Nanotech. Prof. Klamkin is the recipient of the NASA Early Career Faculty Award, the DARPA Young Faculty Award, the DARPA Director's Fellowship, and the PIERS Young Scientist Award.