Wide-bandgap materials are grown by high temperature chemical vapor deposition (CVD) or metal-organic CVD (MOCVD). The possibilities and limits for (MO)CVD are already reached out. In this work we describe another epitaxial process called Next Level Epitaxy (NLE), which uses a surface temperature around 250°C for AlN growth and combines PVD (physical vapor deposition) and PECVD (Plasma enhanced CVD) with in-house developed plasma sources. The growth procedure is similar to that in (MO)CVD. This presentation gives the key benefits of NLE. NLE and its impact on the mass production of wide-bandgap films are discussed. With its in-line concept NLE is a game changer.
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