First Power SiC commercial device has been introduced in the early 2000s, gaining significant traction in the automotive sector by 2018. Since then, extensive technical enhancements have permeated various facets, spanning n-type SiC wafer production to power module development. Power GaN devices, entering the market approximately a decade later around 2010, found success in consumer chargers from 2019 onward. Power GaN devices originate from various technology platforms and levels of integration. This presentation will delve into the technical solutions for WBG Power SiC and GaN, exploring aspects such as device design and packaging. Additionally, it will shed light on advancements in the upcoming UWBG, like Gallium Oxide.
Taha Ayari, Ph.D., is a Technology & Market Analyst, Compound Semiconductor and Emerging Substrates, at Yole Intelligence, part of Yole Group. As a member of the Power Electronics & Wireless division at Yole, Taha’s expertise is mainly dedicated to power, RF, and optoelectronics. He is fully engaged in the development of technology and market reports as well as custom projects. Taha has 2 years’ experience as a Technology & Cost Analyst at System Plus Consulting, part of Yole Développement, where he focuses on the development of compound semiconductor reverse engineering & costing analyses. Prior to Yole, Taha was a research engineer at Georgia Tech Lorraine (Metz, France). He published numerous papers with a particular focus on III-N materials. Taha holds an M.Sc. and a Ph.D. in Electrical and Computer Engineering from the Georgia Institute of Technology (Atlanta, USA).