PRESENTATION
Novel Nitrides for an Energy Efficient Digital Future
The exploration of novel nitride materials like AlScN and AlYN is revolutionizing energy-efficient electronics. These materials, grown epitaxially via MOCVD, enable transformative advancements in high electron mobility transistors (HEMTs) for electric transportation and interconnected systems. Lattice-matched integration with GaN enhances carrier density, device reliability, and output power, achieving over 8 W/mm at 30 GHz. Additionally, their ferroelectric properties support non-volatile memories for AI, combining energy efficiency with long-term data retention. AlScN and AlYN pave the way for high-performance, sustainable solutions, positioning nitrides as essential materials for the digital future.
Stefano Leone
Fraunhofer Institute IAF
Dr. Leone Stefano, born in Catania, Italy, in 1978, received his B.Sc. and M.Sc. degrees in industrial chemistry from the University of Catania and his Ph.D. in semiconductor materials from Linköping University, Sweden, in 2010. With over 20 years of experience in the epitaxial growth of wide band-gap semiconductors, he specializes in the epitaxy of SiC and nitrides, including AlScN and AlYN. Dr. Leone has worked with prominent companies like LPE and Aixtron SE, and currently leads the nitride epitaxy group at the Fraunhofer Institute for Applied Solid State Physics (IAF). He has published over 100 scientific papers and holds several patents.