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Dr. Leone Stefano, born in Catania, Italy, in 1978, received his B.Sc. and M.Sc. degrees in industrial chemistry from the University of Catania and his Ph.D. in semiconductor materials from Linköping University, Sweden, in 2010. With over 20 years of experience in the epitaxial growth of wide band-gap semiconductors, he specializes in the epitaxy of SiC and nitrides, including AlScN and AlYN. Dr. Leone has worked with prominent companies like LPE and Aixtron SE, and currently leads the nitride epitaxy group at the Fraunhofer Institute for Applied Solid State Physics (IAF). He has published over 100 scientific papers and holds several patents.