PRESENTATION

Novel Nitrides for an Energy Efficient Digital Future

The exploration of novel nitride materials like AlScN and AlYN is revolutionizing energy-efficient electronics. These materials, grown epitaxially via MOCVD, enable transformative advancements in high electron mobility transistors (HEMTs) for electric transportation and interconnected systems. Lattice-matched integration with GaN enhances carrier density, device reliability, and output power, achieving over 8 W/mm at 30 GHz. Additionally, their ferroelectric properties support non-volatile memories for AI, combining energy efficiency with long-term data retention. AlScN and AlYN pave the way for high-performance, sustainable solutions, positioning nitrides as essential materials for the digital future.