Gallium Nitride based power devices are seeing increasing adoption in the marketplace driven by need for higher conversion efficiencies and better overall performance. These devices have become mainstay in fast chargers for mobile phones and are replacing traditional silicon devices in power supplies for a host of applications such as datacenters, consumer electronics and electric vehicles. According to analysts, the market for GaN power devices is expected to grow from $400M to about $2B over the next 5 years. To enable this growth, in addition to superior performance, cost will be an important consideration. Transition to 300mm offers a pathway to further reducing cost of such devices. Manufacturing of GaN Power devices places stringent requirements on the enabling MOCVD technology. This technology must offer tight uniformities for thickness and doping while maintaining high throughput, yield and low operating costs. To enable industry adoption of 300mm, Veeco has developed 300mm single wafer MOCVD technology that meets performance requirements for power devices. In this presentation, we will review advances in Veeco’s 300mm MOCVD capability achieved through its Propel® 300mm single wafer system.
Aniruddh (Rudy) Parekh is the Lead Product Marketing Manager for MOCVD systems at Veeco. He has over 20 years of experience in a variety of compound semiconductor materials including arsenic phosphide and nitride materials. He has held several roles at Veeco, from material and applications development to product management and marketing. He received his Masters degree in Chemical Engineering from Cornell University and an MBA from New York University.